enhancement-mode junction field-effect transistor

enhancement-mode junction field-effect transistor

[en′hans·mənt ¦mōd ′jəŋk·shən ′fēld i‚fekt tran′zis·tər] (electronics) A type of gallium arsenide field-effect transistor in which the gate consists of the junction between the n-type gallium arsenide forming the conducting channel and p-type material implanted under a metal electrode. Abbrevate E-JFET.