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单词
gallium arsenide semiconductor
释义
gallium arsenide semiconductor
gallium arsenide semiconductor
[
¦gal·ē·əm ¦ärs·ən‚īd ′sem·i·kən‚dək·tər
]
(solid-state physics)
A semiconductor having a forbidden-band gap of 1.4 electronvolts and a maximum operating temperature of 400°C when used in a transistor.
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更新时间:2025/6/24 21:35:57