| 释义 |
enhancement-mode high-electron-mobility transistor enhancement-mode high-electron-mobility transistor[en′hans·mənt ¦mōd ′hī i¦lek‚trän mō¦bil·əd·ē tran′zis·tər] (electronics) A high-electron-mobility transistor in which application of a positive bias to the gate electrode is required for current to flow between the source and drain electrodes. Abbreviated E-HEMT. |