tunneling magnetoresistance

tunneling magnetoresistance

[‚tən·əl·iŋ mag‚ned·ō·ri′zis·təns] (solid-state physics) A type of magnetoresistance displayed by a trilayer thin-film structure consisting of two metallic ferromagnetic thin films sandwiching an insulating film that is thin enough (less than about 2 nanometers) that electrons can pass through it via quantum-mechanical tunneling. Also known as junction magnetoresistance.