释义 |
runaway effect runaway effect[′rən·ə‚wā i‚fekt] (electronics) The phenomenon whereby an increase in temperature causes an increase in a collector-terminal current in a transistor, which in turn results in a higher temperature and, ultimately, failure of the transistor; the effect limits the power output of the transistor. (plasma physics) The phenomenon whereby an electric current in a plasma produces heat through the Joule effect, and the resulting temperature increase results in an increase in conductivity and, thereby, an increase in current flow. |