Page Mode Dynamic Random Access Memory
Page Mode Dynamic Random Access Memory
(hardware, storage)The RAS signal is kept active, and with each falling edgeof the CAS\\ signal a new column address can be suppliedand the corresponding bits can be accessed. This is fasterthan a full RAS-CAS cycle because only the shorter ColumnAccess Time needs to be obeyed.
Note that strictly speaking such a DRAM is not a true random access memory since accesses to the open row are faster thanto other locations.
EDO RAM is replacing Page Mode DRAM in many newmicrocomputers.