| 释义 |
vertical ballistic transistor vertical ballistic transistor[¦vərd·i·kəl bə‚lis·tik tran′zis·tər] (electronics) A transistor in which, ideally, electrons traverse ballistically (that is without scattering) a very short region that separates a cathode from an anode, and whose effective cross section is modulated by the potential of metal gate contacts. |