| 释义 |
metal semiconductor field-effect transistor metal semiconductor field-effect transistor[′med·əl ′sem·i·kən‚dək·tər ′fēld i‚fekt tran′zis·tər] (electronics) A field-effect transistor that uses a thin film of gallium arsenide, with a Schottky barrier gate formed by depositing a layer of metal directly onto the surface of the film. Abbreviated MESFET. |