metal oxide semiconductor field-effect transistor


metal oxide semiconductor field-effect transistor

[′med·əl ¦äk‚sīd ′sem·i·kən‚dək·tər ′fēld i‚fekt tran′zis·tər] (electronics) A field-effect transistor having a gate that is insulated from the semiconductor substrate by a thin layer of silicon dioxide. Abbreviated MOSFET; MOST; MOS transistor. Formerly known as insulated-gate field-effect transistor (IGFET).