insulated-gate bipolar transistor

[¦in·sə‚lād·əd‚gāt bī‚pō·lər tran′zis·tər] (electronics) A power semiconductor device that combines low forward voltage drop, gate-controlled turnoff, and high switching speed. It structurally resembles a vertically diffused MOSFET, featuring a double diffusion of a p-type region and an n-type region, but differs from the MOSFET in the use of a p + substrate layer (in the case of an n-channel device) for the drain. The effect is to change the transistor into a bipolar device, as this p-type region injects holes into the n-type drift region. Abbreviated IGBT.

单词	insulated-gate bipolar transistor
释义	insulated-gate bipolar transistor insulated-gate bipolar transistor [¦in·sə‚lād·əd‚gāt bī‚pō·lər tran′zis·tər] (electronics) A power semiconductor device that combines low forward voltage drop, gate-controlled turnoff, and high switching speed. It structurally resembles a vertically diffused MOSFET, featuring a double diffusion of a p-type region and an n-type region, but differs from the MOSFET in the use of a p + substrate layer (in the case of an n-channel device) for the drain. The effect is to change the transistor into a bipolar device, as this p-type region injects holes into the n-type drift region. Abbreviated IGBT.
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