hometaxial-base transistor

hometaxial-base transistor

[′häm·ə‚tak·sē·əl ‚bās tran′zis·tər] (electronics) Transistor manufactured by a single-diffusion process to form both emitter and collector junctions in a uniformly doped silicon slice; the resulting homogeneously doped base region is free from accelerating fields in the axial (collector-to-emitter) direction, which could cause undesirable high current flow and destroy the transistor.