a voltage applied to a circuit or device, esp a semiconductor device, in the direction that produces the larger current
Examples of 'forward bias' in a sentence
forward bias
An intense and sharp ultraviolet emission centered at ∼396 nm was observed under forward bias.
Ling Li, Yuantao Zhang, Long Yan, Junyan Jiang, Xu Han, Gaoqiang Deng, Chen Chi, JunfengSong 2016, 'n-ZnO/p-GaN heterojunction light-emitting diodes featuring a buried polarization-inducedtunneling junction', AIP Advanceshttp://dx.doi.org/10.1063/1.4971272. Retrieved from DOAJ CC BY 4.0 (https://creativecommons.org/licenses/by-sa/4.0/legalcode)
The generated photocurrent was measured under reverse and forward bias to readout the output photocurrent signal.
Paula Louro, M. Vieira, M. A. Vieira, A. Karmali, M. Fernades 2013, 'SEMICONDUCTOR DEVICE FOR DETECTION OF FRET SIGNALS', ISEL Academic Journal of Electronics, Telecommunications and Computershttp://journals.isel.pt/index.php/i-ETC/article/view/4. Retrieved from DOAJ CC BY 4.0 (https://creativecommons.org/licenses/by-sa/4.0/legalcode)
We applied electric forward bias on solar cells to simulate the heat contributed from the concentrated sunlight.
Zun-Hao Shih, Ke-Jen Chain, Hwen-Fen Hong 2015, 'Study of Phase Change Materials Applied to CPV Receivers', Journal of Nanomaterialshttp://dx.doi.org/10.1155/2015/672328. Retrieved from DOAJ CC BY 4.0 (https://creativecommons.org/licenses/by-sa/4.0/legalcode)
In addition, the sensor could also work at a greater forward bias current for better sensor performance.
Debo Wei, Jianyu Fu, Ruiwen Liu, Ying Hou, Chao Liu, Weibing Wang, Dapeng Chen 2019, 'Highly Sensitive Diode-Based Micro-Pirani Vacuum Sensor with Low Power Consumption',Sensorshttp://www.mdpi.com/1424-8220/19/1/188. Retrieved from DOAJ CC BY 4.0 (https://creativecommons.org/licenses/by-sa/4.0/legalcode)
In the forward bias of the initial samples, the diode factor had the value 3.7 at room temperature.
Kovalyuk Z. D., Katerynchuk V. M., Kudrynskyi Z. R., Kushnir B. V., Netyaga V. V.,Khomyak V. V. 2015, 'Annealing effect on I-V characteristic of n-ZnO-p-InSe heterojunction', Tekhnologiya i Konstruirovanie v Elektronnoi Apparaturehttp://www.tkea.com.ua/tkea/2015/5-6_2015/pdf/09.pdf. Retrieved from DOAJ CC BY 4.0 (https://creativecommons.org/licenses/by-sa/4.0/legalcode)