pinch-offn.

Brit.

/ˈpɪn(t)ʃɒf/, U.S.

/ˈpɪn(t)ʃˌɔf/,

/ˈpɪn(t)ʃˌɑf/

Origin: Formed within English, by conversion. Etymon: to pinch off at pinch v. 6.

Etymology: < to pinch off at pinch v. 6.

Electronics.

In a field-effect transistor: the meeting of the two non-conducting depletion layers that border the channel, such that little further increase in current is achieved by increasing the drain voltage. Frequently attributive.

ΘΚΠ

the world > matter > physics > solid state physics > semiconductivity > transistor > [noun] > field-effect transistor > feature of

pinch-off1952

1952 W. Shockley in Proc. IRE 40 1374/1 We shall consider a structure operated with the drain beyond pinch-off.

1972 Field-Effect Transistors (Mullard Ltd., London) ii. 8 The line joining the various drain-source voltages V_DS(p) at which this pinch-off occurs (the pinch-off limit) is shown as a broken line.

1992 SIAM Jrnl. Appl. Math. 52 130 These transitions, referred to as pinchoff behaviours, significantly decreased the rate at which the current increases with increasing source-drain bias.

Compounds

pinch-off voltage n. the reverse bias that must be applied to a gate to achieve pinch-off and prevent the flow of current through the channel (equal to the drain voltage at which the current saturates when there is no bias applied to the gate).

ΘΚΠ

the world > matter > physics > solid state physics > semiconductivity > transistor > [noun] > field-effect transistor > voltage applied

pinch-off voltage1952

1952 W. Shockley in Proc. IRE 40 1367/1 W₀ is the magnitude of reverse bias required to make the space charge penetrate the entire p-region. We shall refer to it as the ‘pinch-off voltage’ since it is the voltage that will reduce the channel to zero and pinch off the conducting path.

2003 Appl. Physics Lett. 82 4827 The final result is an enhanced polarization field.., providing an increase of channel carrier density and pinch-off voltage.

This entry has been updated (OED Third Edition, June 2006; most recently modified version published online March 2022).

单词	pinch-off
释义	pinch-offn. Brit. /ˈpɪn(t)ʃɒf/, U.S. /ˈpɪn(t)ʃˌɔf/, /ˈpɪn(t)ʃˌɑf/ Origin: Formed within English, by conversion. Etymon: to pinch off at pinch v. 6. Etymology: < to pinch off at pinch v. 6. Electronics. In a field-effect transistor: the meeting of the two non-conducting depletion layers that border the channel, such that little further increase in current is achieved by increasing the drain voltage. Frequently attributive. ΘΚΠ the world > matter > physics > solid state physics > semiconductivity > transistor > [noun] > field-effect transistor > feature of pinch-off1952 1952 W. Shockley in Proc. IRE 40 1374/1 We shall consider a structure operated with the drain beyond pinch-off. 1972 Field-Effect Transistors (Mullard Ltd., London) ii. 8 The line joining the various drain-source voltages V_DS(p) at which this pinch-off occurs (the pinch-off limit) is shown as a broken line. 1992 SIAM Jrnl. Appl. Math. 52 130 These transitions, referred to as pinchoff behaviours, significantly decreased the rate at which the current increases with increasing source-drain bias. Compounds pinch-off voltage n. the reverse bias that must be applied to a gate to achieve pinch-off and prevent the flow of current through the channel (equal to the drain voltage at which the current saturates when there is no bias applied to the gate). ΘΚΠ the world > matter > physics > solid state physics > semiconductivity > transistor > [noun] > field-effect transistor > voltage applied pinch-off voltage1952 1952 W. Shockley in Proc. IRE 40 1367/1 W₀ is the magnitude of reverse bias required to make the space charge penetrate the entire p-region. We shall refer to it as the ‘pinch-off voltage’ since it is the voltage that will reduce the channel to zero and pinch off the conducting path. 2003 Appl. Physics Lett. 82 4827 The final result is an enhanced polarization field.., providing an increase of channel carrier density and pinch-off voltage. This entry has been updated (OED Third Edition, June 2006; most recently modified version published online March 2022). < n.1952
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