| 单词 | molecular beam epitaxy |
| 释义 | > as lemmasmolecular beam epitaxy molecular beam epitaxy n. Manufacturing Technology a technique used in the manufacture of semiconductor devices in which a molecular beam is used to deposit a very thin or monomolecular layer of a substance on to a crystalline substrate; abbreviated MBE. ΚΠ 1971 Solid State Communic. 9 565/1 The growth and perfection of epitaxial films by molecular beams impinging on a substrate surface can produce large uniform single crystal layers... Other advantages of molecular beam epitaxy (MBE) such as uniform doping profiles with abrupt junctions have also been demonstrated. 1986 Sci. Amer. Oct. 110/3 One of the most promising techniques has been molecular-beam epitaxy (MBE), by means of which exquisitely thin layers of different semiconductor materials are deposited successively almost as if by a spray gun. 1992 Microelectronics Jrnl. 23 502/1 Many attempts have been made to overcome these difficulties by using specific dopant materials and non-equilibrium growth conditions with modern growth techniques like molecular beam epitaxy. < as lemmas |
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