Gunnn.

Brit.

/ɡʌn/, U.S.

/ˈɡən/

Etymology: < the name of John Battiscombe Gunn (1928–2008), British-born U.S. physicist, who first observed the effect in 1963.

Gunn effect: a phenomenon observed in certain semiconductors (as gallium arsenide and indium phosphide), in which a (constant) electric field greater than some threshold value applied between opposite faces of a thin piece of the material results in an oscillatory electric current with a frequency in the microwave region. So Gunn diode: a semiconductor diode in which the Gunn effect is produced.

ΚΠ

1964 H. Kroemer in Proc. IEEE 52 1736/1 Gunn (1) has recently discovered a new kind of current oscillations at microwave frequencies, in n-type GaAs and InP... The purpose of this correspondence is to point out that most..of the known properties of the Gunn effect can be explained, at least quantitatively, if [etc.].

1966 Proc. IEEE 54 1480/2 Oscillations covering 4 Gc/s to 31 Gc/s from a single Gunn diode.

1969 New Scientist 4 Dec. 511/2 A solid-state microwave source—a Gunn diode—is used as part of a low-cost electron spin resonance (ESR) experimental system.

1971 I. J. Kampel Semiconductors xix. 198 Devices such as the Gunn-effect diode considerably extend the range of the electromagnetic spectrum in which we can control and generate frequencies.

This entry has not yet been fully updated (first published 1972; most recently modified version published online March 2022).

单词	gunn
释义	Gunnn. Brit. /ɡʌn/, U.S. /ˈɡən/ Etymology: < the name of John Battiscombe Gunn (1928–2008), British-born U.S. physicist, who first observed the effect in 1963. Gunn effect: a phenomenon observed in certain semiconductors (as gallium arsenide and indium phosphide), in which a (constant) electric field greater than some threshold value applied between opposite faces of a thin piece of the material results in an oscillatory electric current with a frequency in the microwave region. So Gunn diode: a semiconductor diode in which the Gunn effect is produced. ΚΠ 1964 H. Kroemer in Proc. IEEE 52 1736/1 Gunn (1) has recently discovered a new kind of current oscillations at microwave frequencies, in n-type GaAs and InP... The purpose of this correspondence is to point out that most..of the known properties of the Gunn effect can be explained, at least quantitatively, if [etc.]. 1966 Proc. IEEE 54 1480/2 Oscillations covering 4 Gc/s to 31 Gc/s from a single Gunn diode. 1969 New Scientist 4 Dec. 511/2 A solid-state microwave source—a Gunn diode—is used as part of a low-cost electron spin resonance (ESR) experimental system. 1971 I. J. Kampel Semiconductors xix. 198 Devices such as the Gunn-effect diode considerably extend the range of the electromagnetic spectrum in which we can control and generate frequencies. This entry has not yet been fully updated (first published 1972; most recently modified version published online March 2022). < n.1964
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