epitaxyn.

/ɛpɪˈtaksi/

/ˈɛpɪtaksi/

Forms: Also in modern Latin form epiˈtaxis.

Etymology: < French épitaxie (L. Royer 1928, in Bull. de la Soc. française de Min. LI. 8), < epi- prefix + Greek τάξις arrangement: see -y suffix³.

The growth of crystals on a crystalline substrate that determines their orientation; the orientation of crystals so grown.

ΚΠ

1929 Mineral. Abstr. IV. 175 ‘Épitaxie’ is possible when the reticular distances are approximately identical only in two dimensions and not in three.]

1931 Mineral. Abstr. IV. Index 566 Epitaxy.

1934 Mineral. Abstr. 5 495 For epitaxy there is required both geometrical agreement and similarity of polarity between particles which replace one another at the points of union.

1949 Proc. Physical Soc. A. 62 344 (heading) The structure and epitaxy of lead chloride deposits formed from lead sulphide and sodium chloride.

1951 H. E. Buckley Crystal Growth x. 382 The formation of small crystal elements of the impurity growing, on account of dimensional similarity, in parallel position on the plane in the host crystal (epitaxis).

1961 New Scientist 26 Oct. 244/1 Epitaxis. This is the latest weapon in the semiconductor engineers' armoury.

Derivatives

epiˈtaxial adj. [-al suffix¹] grown by, characterized by, or resulting from epitaxy: used of crystals, crystal growth, and crystal orientation.

ΚΠ

1949 Proc. Physical Soc. A. 62 352 When strong epitaxial orientation occurs there are..usually two or more lattice row types which are parallel in the substrate and overgrowth crystals.

1960 New Scientist 25 Aug. 504/3 Epitaxial crystal growth (in which the growing crystal has the same orientation as the ‘seed’).

1962 L. P. Hunter Handbk. Semiconductor Electronics (ed. 2) iv. 46 The transistors currently referred to as ‘epitaxial’ are diffused junction transistors made on epitaxially deposited material.

1966 New Scientist 30 June 848/1 It is now also possible to grow epitaxial silicon crystal layers on to a single-crystal silicon substrate.

epiˈtaxially adv. so that epitaxy occurs; by an epitaxial process.

ΚΠ

1960 Proc. IRE 48 1642/1 Epitaxial Diffused Transistors. This letter describes diffused base transistors, the structures of which incorporate thin semiconductor layers epitaxially deposited on low-resistivity substrates of the same semiconductor.

This entry has not yet been fully updated (first published 1972; most recently modified version published online December 2020).

单词	epitaxy
释义	epitaxyn. /ɛpɪˈtaksi//ˈɛpɪtaksi/ Forms: Also in modern Latin form epiˈtaxis. Etymology: < French épitaxie (L. Royer 1928, in Bull. de la Soc. française de Min. LI. 8), < epi- prefix + Greek τάξις arrangement: see -y suffix³. The growth of crystals on a crystalline substrate that determines their orientation; the orientation of crystals so grown. ΚΠ 1929 Mineral. Abstr. IV. 175 ‘Épitaxie’ is possible when the reticular distances are approximately identical only in two dimensions and not in three.] 1931 Mineral. Abstr. IV. Index 566 Epitaxy. 1934 Mineral. Abstr. 5 495 For epitaxy there is required both geometrical agreement and similarity of polarity between particles which replace one another at the points of union. 1949 Proc. Physical Soc. A. 62 344 (heading) The structure and epitaxy of lead chloride deposits formed from lead sulphide and sodium chloride. 1951 H. E. Buckley Crystal Growth x. 382 The formation of small crystal elements of the impurity growing, on account of dimensional similarity, in parallel position on the plane in the host crystal (epitaxis). 1961 New Scientist 26 Oct. 244/1 Epitaxis. This is the latest weapon in the semiconductor engineers' armoury. Derivatives epiˈtaxial adj. [-al suffix¹] grown by, characterized by, or resulting from epitaxy: used of crystals, crystal growth, and crystal orientation. ΚΠ 1949 Proc. Physical Soc. A. 62 352 When strong epitaxial orientation occurs there are..usually two or more lattice row types which are parallel in the substrate and overgrowth crystals. 1960 New Scientist 25 Aug. 504/3 Epitaxial crystal growth (in which the growing crystal has the same orientation as the ‘seed’). 1962 L. P. Hunter Handbk. Semiconductor Electronics (ed. 2) iv. 46 The transistors currently referred to as ‘epitaxial’ are diffused junction transistors made on epitaxially deposited material. 1966 New Scientist 30 June 848/1 It is now also possible to grow epitaxial silicon crystal layers on to a single-crystal silicon substrate. epiˈtaxially adv. so that epitaxy occurs; by an epitaxial process. ΚΠ 1960 Proc. IRE 48 1642/1 Epitaxial Diffused Transistors. This letter describes diffused base transistors, the structures of which incorporate thin semiconductor layers epitaxially deposited on low-resistivity substrates of the same semiconductor. This entry has not yet been fully updated (first published 1972; most recently modified version published online December 2020). < n.1931
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