| 释义 |
Schottky|ˈʃɒtkɪ|
[The name of Walter Schottky (1886–1976), German physicist.]
1. Used attrib. in Electr. and Electronics: Schottky barrier, an electrostatic depletion layer formed at the interface of a metal and a semiconductor in contact, causing the junction to act as an electrical rectifier; freq. attrib.; Schottky diagram = Schottky plot; Schottky diode, a solid-state diode having a metal-semiconductor junction, used in fast switching and voltage-clamping applications; Schottky effect, the increase in thermionic emission of a solid surface resulting from the lowering of its work function by the presence of an external electric field; esp. the increase in anode current in a thermionic valve beyond that predicted by the Richardson equation because of the electric field produced by the anode at the surface of the cathode; Schottky line, the straight line on the Schottky plot predicted by the Schottky theory; Schottky plot, a diagram used to illustrate the Schottky effect, obtained by plotting the logarithm of the current density against the square root of the applied electric field at constant emitter temperature; Schottky slope, the gradient of the Schottky line; Schottky theory, the theoretical basis of the Schottky effect.
1949Proc. Inst. Electr. Engineers XCVI. i. 258, F0 is the field of the Sc[h]ottky barrier at the contact with the metal. 1957H. K. Henisch Rectifying Semi-Conductor Contacts vii. 195 It is desirable to examine to what extent tunnel penetration near the top of a Schottky barrier (where the barrier is thin) determines the effective barrier height. 1964Bell System Technical Jrnl. XLIII. 215 GaAs Schottky barrier varactor diodes constructed on epitaxial films may be designed to yield a high cutoff frequency. 1975Schottky barrier [see Schottky diode below].
1967Brit. Jrnl. Appl. Physics XVIII. 629 The saturation values were obtained from Schottky diagrams in which the logarithm of the current is plotted against the square root of the anode voltage.
1968Proc. Inst. Electr. & Electronics Engineers LVI. 232/2 (heading) Integrated Schottky-diode clamp for transistor storage time control. 1969Electronics 21 July 76/2 The Schottky diode storage time is effectively zero, in contrast to typical values of 6 nsec for the gold-doped junction diode and 30 nsec for the junction diode without gold doping. 1975D. G. Fink Electronics Engineers' Handbk. viii. 39 In Schottky barrier diodes current flow is by majority carriers, rather than by minority carrier diffusion. Thus switching speeds of Schottky diodes are not limited by storage-time delays.
1925J. B. Johnson in Physical Rev. XXVI. 71 When current is limited by space charge the Schottky effect decreases because of the interaction of the electrons. 1949Rev. Mod. Physics XXI. 226/2 Theory and the periodic Schottky effect both indicate at most a small reflection effect for clean tungsten. 1975D. G. Fink Electronics Engineers' Handbk. i. 34 The increase in current as the anode voltage is increased beyond the value at which the normal saturation value of emitted current occurs (the Schottky effect) results from reduction by the applied field of the work function.
1930Rev. Mod. Physics II. 151 A quantitative estimate of the field strength that is needed to cause the emission to depart appreciably from the Schottky line..may be made by considering the..simplified case. 1949Ibid. XXI. 200/1 The well-established low voltage deviation from the Schottky line for thermionic emission from polycrystal surfaces of clean metals indicates a variation in thermionic properties of the various surfaces of crystals.
Ibid. 204/1 Generally, the experimental Schottky plots deviate from the theory..in the low voltage region. 1967Brit. Jrnl. Appl. Physics XVIII. 629 The zero-field emission is obtained by prolonging the straight asymptote of the Schottky plots to the V = o line.
1939Physical Rev. LVI. 664/2 The slope of the reference line..was the Schottky slope. 1963J. J. Brophy Electr. Processes in Materials xi. 317 At the larger fields, the data points fall on a straight line having the Schottky slope.., and extrapolation of this line to zero field gives the value of J.
1930Rev. Mod. Physics II. 155 Reynolds..found a variation with voltage in excellent agreement with the Schottky theory for field strengths exceeding about 10,000 volts/cm. 1958Condon & Odishaw Handbk. of Physics viii. vi. 77/2 The small periodic deviations of the emission current from that predicted by the Schottky theory are..a field effect but come about through the interference effect of electron waves as the shape of the barrier is changed by means of the applied field.
2. Used attrib. and in the possessive with reference to the Schottky defect, a vacancy in a crystal lattice in which the missing atom is not an interstitial one and the number of anion and cation vacancies is such as to preserve electrical neutrality; also, the smallest possible group of such vacancies that preserves neutrality.
1938Trans. Faraday Soc. XXXIV. 861 In the case of Schottky-disorder an equivalent number of anions and cations have been removed from normal lattice positions leaving holes of both ‘signs’. 1940Mott & Gurney Electronic Processes in Ionic Crystals ii. 26 There are two ways in which..vacant lattice points and interstitial atoms or ions can arise; we shall call them ‘Frenkel defects’ and ‘Schottky defects’. Ibid. 30 We now consider a crystal containing n Schottky holes. 1958K. M. Hornsby tr. P. Glafkides's Photographic Chem. iii. 25 Schottky's defects consist of shallow vacant sites of Br- and Ag+ ions, in equal quantity. 1958Condon & Odishaw Handbk. of Physics viii. iii. 48/2 In a crystal containing a divalent cation impurity,..there will be a temperature below which the number of Schottky cation vacancies will be smaller than the number of additional free cation vacancies. 1966McGraw-Hill Encycl. Sci. & Technol. III. 583/2 In CaCl2, the Schottky defect is one positive-ion vacancy and two negative-ion vacancies. 1966C. R. Tottle Sci. Engin. Materials iv. 90 The Schottky defect..is not limited to the migration of an atom to the surface, but refers to the production of a vacancy whenever a migrating atom moves to some position that does not create disturbance in the remaining lattice, i.e. the surface of a void or other sink of disordered atoms. 1967F. C. Brown Physics of Solids x. 303 By comparing the lattice parameter..with the observed mass and volume of the sample, it is possible to distinguish between Frenkel and Schottky disorder. 1972B. Henderson Defects in Crystalline Solids i. 11 The change in thermal entropy favours the formation of Schottky vacancies. |