| 释义 |
Gunn|gʌn|
[The name of John Battiscombe Gunn (b. 1928), physicist, who first observed the effect in 1963.]
Gunn effect: a phenomenon observed in certain semiconductors (as gallium arsenide and indium phosphide), in which a (constant) electric field greater than some threshold value applied between opposite faces of a thin piece of the material results in an oscillatory electric current with a frequency in the microwave region. So Gunn diode: a semiconductor diode in which the Gunn effect is produced.
1964H. Kroemer in Proc. IEEE LII. 1736/1 Gunn (1) has recently discovered a new kind of current oscillations at microwave frequencies, in n-type GaAs and InP... The purpose of this correspondence is to point out that most..of the known properties of the Gunn effect can be explained, at least quantitatively, if [etc.]. 1966Ibid. LIV. 1480/2 Oscillations covering 4 Gc/s to 31 Gc/s from a single Gunn diode. 1969New Scientist 4 Dec. 511/2 A solid-state microwave source—a Gunn diode—is used as part of a low-cost electron spin resonance (ESR) experimental system. 1971I. J. Kampel Semiconductors xix. 198 Devices such as the Gunn-effect diode considerably extend the range of the electromagnetic spectrum in which we can control and generate frequencies. |